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| Silicon Schottky Diode Preliminary Data Low-power Schottky rectifier diode q For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes q BAT 66-05 Type BAT 66-05 Marking BAT 66-05 Ordering Code (tape and reel) Q62702-A988 Pin Configuration Package1) SOT-223 Maximum Ratings Parameter Reverse voltage Forward current Average forward current, 50 Hz Surge forward current, t 10 ms Total power dissipation, TS 126 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VR IF IFAV IFSM Ptot Tj Tstg Values 40 2 1 10 1.2 150 - 55 ... + 150 Unit V A W C 160 20 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAT 66-05 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Reverse current VR = 25 V VR = 25 V, TA = 85 C Forward voltage IF = 10 mA IF = 100 mA IF = 1 A Diode capacitance VR = 10 V, f = 1 MHz Symbol min. IR - - VF - - - CT - 0.28 0.35 0.47 30 0.35 - 0.60 40 pF - - 10 1 Values typ. max. A Unit mA V Forward current IF = f (VF) Reverse current IR = f (VR) Semiconductor Group 2 BAT 66-05 Forward current IF = f (TA*; TS) * Package mounted on epoxy Semiconductor Group 3 |
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